Tsann Lin

Title: Innovations and Patents of Tsann Lin

Introduction

Tsann Lin is a prominent inventor based in Hsinchu, Taiwan, known for his significant contributions to semiconductor technology. With a remarkable portfolio of 19 patents, he has established himself as a key player in the field of ferroelectric memory devices and semiconductor structures.

Latest Patents

Two of Tsann Lin's latest patents showcase his innovative approaches to semiconductor technology. The first patent, titled "Method of Forming Ferroelectric Memory Device," outlines a method for creating a ferroelectric layer between a gate electrode and a channel layer using a unique first atomic layer deposition (ALD) process. This process incorporates a first precursor and a mixed precursor containing hafnium and zirconium, allowing the ferroelectric layer to be formed as HfZrO with an orthorhombic phase to enhance ferroelectric polarization and properties.

The second patent, "Semiconductor Structure and Method of Forming the Same," details the methodology for creating a semiconductor structure, which involves multiple steps including the formation of a memory layer over a gate electrode, and a channel layer over the memory layer, followed by a first SUT treatment. Furthermore, it involves forming a second dielectric layer along with source and drain electrodes, all while maintaining a temperature of less than approximately 400° C during the treatments.

Career Highlights

Tsann Lin currently works for Taiwan Semiconductor Manufacturing Company Ltd., a leader in semiconductor manufacturing. His extensive work in the industry highlights his expertise and dedication to advancing semiconductor technologies.

Collaborations

Throughout his career, Tsann Lin has collaborated with esteemed colleagues such as Ji-Feng Ying and Jhong-Sheng Wang. These partnerships reflect a dynamic team environment that fosters innovation and the development of cutting-edge semiconductor technologies.

Conclusion

Tsann Lin's contributions to the field of semiconductor technology, as evidenced by his patents and collaborations, reaffirm his position as an influential inventor in Hsinchu, Taiwan. His innovative approaches continue to pave the way for advancements in memory devices and semiconductor structures, making a lasting impact on the industry.