The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Apr. 08, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ya-Ling Lee, Hsinchu, TW;
Wei-Gang Chiu, New Taipei, TW;
Yen-Chieh Huang, Changhua County, TW;
Han-Ting Tsai, Kaoshiung, TW;
Tsann Lin, Taipei, TW;
Yu-Ming Lin, Hsinchu, TW;
Chung-Te Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
An integrated circuit device includes a ferroelectric layer that is formed with chlorine-free precursors. A ferroelectric layer formed according to the present teaching may be chlorine-free. Structures adjacent the ferroelectric layer are also formed with chlorine-free precursors. The absence of chlorine in the adjacent structures prevents diffusion of chlorine into the ferroelectric layer and prevents the formation of chlorine complexes at interfaces with the ferroelectric layer. The ferroelectric layer may be used in a memory device such as a ferroelectric field effect transistor (FeFET). The absence of chlorine ameliorates time-dependent dielectric breakdown (TDDB) and Bias Temperature Instability (BTI).