The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Jul. 29, 2021
Magnetic tunneling junction (mtj) element with an amorphous buffer layer and its fabrication process
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Some embodiments relate to a method for manufacturing a memory device. The method includes forming a bottom electrode layer over a substrate. A first etch process is performed, thereby defining one or more holes in the bottom electrode layer and defining a bottom electrode. A pair of insulators are formed within the one or more holes such that the insulators are disposed on opposing sides of the bottom electrode. A buffer layer, a seed layer, a magnetic tunnel junction (MTJ) stack, and a top electrode are formed over the bottom electrode. A second etch process is performed to remove a portion of the buffer layer, the seed layer, the MTJ stack, and the top electrode, thereby defining a memory cell.