This inventor holds 154 USPTO granted patents and 55 published patent applications and 53 EPO patents, primarily in Memory Device Technology (CPC class H10B61-22). Top assignees: Acer Inc., Taiwan Semiconductor Manufacturing Comp. Ltd., Industrial Technology Research Institute. Active years: 2009-2026.
Inventors with similar research interests:
Location History:
- Kaohsiung, TW (2009 - 2011)
- Taipei County, TW (2011)
- Sinjhuang, TW (2012)
- Zhudong Township, Hsinchu County, TW (2015)
- Xinzhuang, TW (2016)
- Taoyuan, TW (2021 - 2023)
- Hsinchu, TW (2009 - 2024)
- Hsinchu County, TW (2011 - 2024)
- New Taipei, TW (2014 - 2024)
Company Filing History:
50 out of 1,839 
49 out of 42,759 
44 out of 9,301 
Years Active: 2009-2026
Areas of Expertise:
Title: Chien-Min Lee: Pioneering Innovations in Semiconductor Devices
Introduction:
Chien-Min Lee, based in New Taipei, TW, is a highly accomplished inventor and researcher in the field of semiconductor devices. With an impressive portfolio of 100 patents, Lee has consistently pushed the boundaries of technological advancements in this domain. His latest patents, which include innovations such as the semiconductor device and manufacturing method of semiconductor device, have garnered significant attention in the industry.
Semiconductor Device and Manufacturing Method:
One of Lee's recent patents focuses on a semiconductor device that comprises a pair of active devices, a composite spin Hall electrode, and a magnetic tunnel junction (MTJ). The composite spin Hall electrode is electrically connected to the pair of active devices, while the MTJ is positioned on the opposite side of the composite spin Hall electrode. The spin Hall electrode consists of heavy metal layers and a spacer layer, with the heavy metal layers being made from a heavy metal in a metastable state. The spacer layer is composed of a different material than the heavy metal layers.
SOT-MRAM with Shared Selector:
Another notable patent from Chien-Min Lee entails a magnetic memory device known as the SOT-MRAM (Spin-Orbit Torque Magnetic Random-Access Memory) with a shared selector layer. This device features a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring positioned over the MTJ stack, and a shared selector layer connected to the first terminal. The SOT-MRAM has the potential to revolutionize memory technology, enhancing speed and efficiency.
Work Experience and Collaborators:
Throughout his career, Lee has worked with prestigious companies in the semiconductor industry, including Acer Inc. and Taiwan Semiconductor Manufacturing Company Limited (TSMC). Acer Inc. is a leading multinational technology corporation specializing in computer hardware and electronics, while TSMC is a renowned semiconductor foundry company.
In his research, Lee has collaborated with notable colleagues, such as Chung-Te Lin and Tai-Yen Peng. These partnerships have undoubtedly facilitated knowledge exchange, fostering innovation and driving the development of cutting-edge technologies.
Conclusion:
Chien-Min Lee's contributions to the field of semiconductor devices have played a significant role in advancing technology and shaping the industry. With an extensive patent portfolio and a focus on inventions like semiconductor devices and memory technologies, Lee continues to make remarkable strides in the semiconductor domain. His innovations have undoubtedly left a lasting impact on the industry, pushing the boundaries of what is possible in the world of electronics and computers.