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Hsinchu, Taiwan

Promos Technologies, Inc

USPTO Granted Patents = 357

Trademarks = 5

Forward Citations = 2,138

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328 inventors (with patents filed for the assignee):

Yi Ding (32 out of 34 patents)

Jon Allan Faue (20 out of 38 patents)

Brian S Lee (16 out of 16 patents)

4. Zhong Dong (15 out of 15 patents)

5. Yueh-Chuan Lee (11 out of 45 patents)

6. Chuck Jang (11 out of 14 patents)

7. Chia-Shun Hsiao (11 out of 18 patents)

8. Hsiao-Che Wu (10 out of 11 patents)

9. John D Heightley (9 out of 17 patents)

10. Ching-Hwa Chen (8 out of 18 patents)

11. Barbara Haselden (8 out of 12 patents)

12. Jiun-Fang Wang (7 out of 19 patents)

13. Cheng-Che Lee (7 out of 10 patents)

14. Yung-Hsien Wu (7 out of 7 patents)

15. Chunchieh Huang (6 out of 10 patents)

Core Competencies:

Dynamic Random Access Memory

Phase Change Memory

Integrated Circuit Devices

Non-Volatile Memory

Semiconductor Fabrication

Charge Storage Regions

Photolithography Techniques

Gate Structures

Recessed Channel Transistor

Power MOSFET Array

Data Sensing Methods

Delay Locked Loop

357 patents: Sort by Forward Citations

1. 8594114 - Shielding of datalines with physical placement based on time staggered access (2013-11-26),

2. 8339882 - Dual bit line precharge architecture and method for low power dynamic random access memory (DRAM) integrated circuit devices and devices incorporating embedded DRAM (2012-12-25),

3. 8305425 - Solid-state panoramic image capture apparatus (2012-11-06),

4. 8283733 - Semiconductor devices with gate electrodes and with monocrystalline silicon regions that contain atoms of nitrogen and one or more of chlorine, bromine, sulfur, fluorine, or phosphorus (2012-10-09),

5. 8216877 - Phase-change memory and fabrication method thereof (2012-07-10),

6. 8125020 - Non-volatile memory devices with charge storage regions (2012-02-28),

7. 8103978 - Method for establishing scattering bar rule (2012-01-24),

8. 8071970 - Phase change memory device and fabrication method thereof (2011-12-06),

9. 7989795 - Phase change memory device and method for fabricating the same (2011-08-02),

10. 7932565 - Integrated circuit structure having bottle-shaped isolation (2011-04-26),

11. 7919384 - Method of making planar-type bottom electrode for semiconductor device (2011-04-05),

12. 7916567 - Twin cell architecture for integrated circuit dynamic random access memory (DRAM) devices and those devices incorporating embedded DRAM (2011-03-29),

13. 7910429 - Method of forming ONO-type sidewall with reduced bird's beak (2011-03-22),

14. 7902631 - Contact plug structure (2011-03-08),

15. 7897431 - Stacked semiconductor device and method (2011-03-01),

ProMOS Technologies, Inc is a leading global provider of semiconductor memory solutions and services. Founded in 1996, ProMOS specializes in manufacturing DRAM and Flash memory products for various applications, including mobile devices, personal computers, and data centers. With a commitment to technological innovation and customer satisfaction, ProMOS delivers high-quality memory solutions to meet the ever-growing demands of the digital age.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

357 Patents

#15 in Hsinchu

#77 in Taiwan

#2,487 in the World

Hsinchu, Taiwan

Promos Technologies, Inc

Forward Citations = 2,138

328 inventors:

Yi Ding (32 out of 34 patents)

Jon Allan Faue (20 out of 38 patents)

Brian S Lee (16 out of 16 patents)

4. Zhong Dong (15 out of 15 patents)

5. Yueh-Chuan Lee (11 out of 45 patents)

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