For the Inventor, By the Inventor

Enter assignee name

Hsinchu, Taiwan

Promos Technologies, Inc

USPTO Granted Patents = 358

% Expired Patents = 14.8

Trademarks = 1

Forward Citations = 2,158

Loading Chart...

Loading Chart...

329 inventors (with patents filed for the assignee):

Yi Ding (32 out of 34 patents)

Jon Allan Faue (20 out of 38 patents)

Brian S Lee (16 out of 16 patents)

4. Zhong Dong (15 out of 15 patents)

5. Yueh-Chuan Lee (11 out of 47 patents)

6. Chuck Jang (11 out of 14 patents)

7. Chia-Shun Hsiao (11 out of 18 patents)

8. Hsiao-Che Wu (10 out of 11 patents)

9. John D Heightley (9 out of 17 patents)

10. Ching-Hwa Chen (8 out of 18 patents)

11. Barbara Haselden (8 out of 12 patents)

12. Jiun-Fang Wang (7 out of 19 patents)

13. Cheng-Che Lee (7 out of 10 patents)

14. Yung-Hsien Wu (7 out of 7 patents)

15. Chunchieh Huang (6 out of 10 patents)

Core Competencies:

Phase Change Memory

Dynamic RAM

Semiconductor Fabrication

Non-Volatile Memory

Integrated Circuits

Memory Structure

Charge Storage

Data Sensing

Isolation Techniques

Transistor Structures

Photolithography

Delay Locked Loop

358 patents: Sort by Forward Citations

1. 12638643 - Photonic integrated circuit structure (2026-05-26),

2. 8594114 - Shielding of datalines with physical placement based on time staggered access (2013-11-26),

3. 8339882 - Dual bit line precharge architecture and method for low power dynamic random access memory (DRAM) integrated circuit devices and devices incorporating embedded DRAM (2012-12-25),

4. 8305425 - Solid-state panoramic image capture apparatus (2012-11-06),

5. 8283733 - Semiconductor devices with gate electrodes and with monocrystalline silicon regions that contain atoms of nitrogen and one or more of chlorine, bromine, sulfur, fluorine, or phosphorus (2012-10-09),

6. 8216877 - Phase-change memory and fabrication method thereof (2012-07-10),

7. 8125020 - Non-volatile memory devices with charge storage regions (2012-02-28),

8. 8103978 - Method for establishing scattering bar rule (2012-01-24),

9. 8071970 - Phase change memory device and fabrication method thereof (2011-12-06),

10. 7989795 - Phase change memory device and method for fabricating the same (2011-08-02),

11. 7932565 - Integrated circuit structure having bottle-shaped isolation (2011-04-26),

12. 7919384 - Method of making planar-type bottom electrode for semiconductor device (2011-04-05),

13. 7916567 - Twin cell architecture for integrated circuit dynamic random access memory (DRAM) devices and those devices incorporating embedded DRAM (2011-03-29),

14. 7910429 - Method of forming ONO-type sidewall with reduced bird's beak (2011-03-22),

15. 7902631 - Contact plug structure (2011-03-08),

Promos Technologies, Inc., based in Hsinchu, Taiwan, specializes in the development and manufacturing of advanced phase change memory solutions. The company focuses on innovative memory technologies, including dynamic RAM and non-volatile memory, which are essential for modern computing applications. With expertise in semiconductor fabrication and integrated circuits, Promos Technologies is dedicated to enhancing memory structures and charge storage capabilities, contributing to the evolution of data sensing technologies in the semiconductor industry.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

Promos Technologies, Inc

358 Patents

#26 in Hsinchu

#83 in Taiwan

#2,562 in the World

Hsinchu, Taiwan

Promos Technologies, Inc

Forward Citations = 2,158

329 inventors:

Yi Ding (32 out of 34 patents)

Jon Allan Faue (20 out of 38 patents)

Brian S Lee (16 out of 16 patents)

4. Zhong Dong (15 out of 15 patents)

5. Yueh-Chuan Lee (11 out of 47 patents)

Please report any incorrect information to [email protected]

Loading…