Location History:
- Taoyuan, TW (2002)
- Jungli, TW (2002)
- Hsinchu, TW (2002 - 2003)
- Taoyuan Hsien, TW (2002 - 2009)
- Chung Li, TW (2007 - 2011)
Company Filing History:
10 out of 357 
1 out of 832,891 Years Active: 2002-2011
Title: Hsiao-Che Wu: Innovator in Semiconductor Technology
Introduction
Hsiao-Che Wu is a prominent inventor based in Taoyuan Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His innovative approaches have paved the way for advancements in semiconductor devices.
Latest Patents
One of his latest patents is a method of making a planar-type bottom electrode for semiconductor devices. This method involves forming a sacrificial layer structure on a substrate, defining multiple first trenches filled with insulating material, and creating second trenches that intersect the first. The result is a bottom electrode layer separated by insulating layers. Another notable patent is for fabricating a multi-fin field effect transistor. This invention includes a substrate surrounded by a trench, with fin-type silicon layers formed in a region prepared for a gate. The design incorporates an oxide layer, a conductive layer, and a gate oxide layer, enhancing the performance of the transistor.
Career Highlights
Hsiao-Che Wu has worked with various companies, including Promos Technologies, Inc. His experience in the semiconductor industry has been instrumental in his development of innovative technologies.
Collaborations
He has collaborated with notable coworkers such as Wen-Li Tsai and Yu-Min Tsai, contributing to the advancement of semiconductor technologies through teamwork and shared expertise.
Conclusion
Hsiao-Che Wu's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices.