The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2007
Filed:
Oct. 25, 2005
Hsiao-che Wu, Taoyuan Hsien, TW;
Hsiao-Che Wu, Taoyuan Hsien, TW;
ProMOS Technologies Inc., Hsinchu, TW;
Abstract
A method of fabricating a dynamic random access memory cell is provided. A substrate having a patterned mask layer thereon and a deep trench therein is provided. The patterned mask layer exposes the deep trench. A deep trench capacitor is formed inside the deep trench. Thereafter, a trench is formed in the substrate on one side of the deep trench capacitor. The trench exposes a portion of the upper electrode of the deep trench capacitor and a portion of the substrate. After that, a semiconductor strip is formed in the trench. A gate dielectric layer is formed over the substrate to cover the exposed semiconductor strip and the substrate. A gate is formed over the gate dielectric layer such that the gate and the semiconductor strip crosses over each other, and the gate-covered portion of the semiconductor strip serves as a channel region.