Promos Technologies, Inc

Other

Hsiao-Che Wu

Wen-Li Tsai

Ming-Yen Li

Yu-Min Tsai

A method of making planar-type bottom electrode for semiconductor device is disclosed. A sacrificial layer structure is formed on a substrate. Multiple first trenches are defined in the sacrificial layer structure, wherein those first trenches are arranged in a first direction. The first trenches are filled with insulating material to form an insulating layer in each first trench. Multiple second trenches are defined in the sacrificial layer structure between the insulating layers, and are arranged in a second direction such that the second trenches intersect the first trenches. The second trenches are filled with bottom electrode material to form a bottom electrode layer in each second trench. The insulating layers separate respectively the bottom electrode layers apart from each other. Lastly, removing the sacrificial layer structure defines a receiving space by two adjacent insulating layers and two adjacent bottom electrode layers.

Method of making planar-type bottom electrode for semiconductor device

A multi-fin field effect transistor includes a substrate, an oxide layer, a conductive layer, a gate oxide layer, and a doped region is provided. The substrate is surrounded by a trench, and there are at least two fin-type silicon layers formed in the substrate in a region prepared to form a gate thereon. The oxide layer is disposed in the trench and the top surface of the oxide layer is lower than that of the fin-type silicon layers. The conductive layer is disposed in the region prepared to form a gate. The top surface of the conductive layer is higher than that of the fin-type silicon layers. The gate oxide layer is disposed between the conductive layer and the fin-type silicon layers and disposed between the conductive layer and the substrate. The doped region is disposed in the substrate on both sides of the conductive layer.

Method of fabricating multi-fin field effect transistor

A real-time system adapted to a PVD apparatus for monitoring and controlling film uniformity is described. The system includes a shielding plate, a monitoring device, and a data processing program. The shielding plate is disposed on an inner wall of a reaction chamber above a wafer stage. An opening in the center of the shielding plate exposes the wafer. The monitoring device including a scanner and a sensor respectively disposed on opposite sidewalls of the reaction chamber between the shielding plate and the wafer stage is used for measuring the flux of the particles on every portion of the wafer to acquire real-time uniformity data including a function of the wafer position and the flux. The data processing program compares the real-time uniformity data and reference uniformity data, and a feedback signal is outputted to the PVD apparatus to adjust the process parameter thereof for controlling film uniformity.

Real-time system for monitoring and controlling film uniformity and method of applying the same

A method of forming a multilayer electrode capacitor is described. A trench is formed in a substrate or in an insulator layer. Two sets of conductive layers are deposited on the inner surface of the trench. The first set of conductive layers is electrically connected to each other, and so is the second set of conductive layers. Each of the second set of conductive layers is inserted between two first conductive layers, and dielectric layers are interposed between two conductive layers to form a multilayer electrode capacitor.

Method for forming multilayer electrode capacitor

A method of fabricating a dynamic random access memory cell is provided. A substrate having a patterned mask layer thereon and a deep trench therein is provided. The patterned mask layer exposes the deep trench. A deep trench capacitor is formed inside the deep trench. Thereafter, a trench is formed in the substrate on one side of the deep trench capacitor. The trench exposes a portion of the upper electrode of the deep trench capacitor and a portion of the substrate. After that, a semiconductor strip is formed in the trench. A gate dielectric layer is formed over the substrate to cover the exposed semiconductor strip and the substrate. A gate is formed over the gate dielectric layer such that the gate and the semiconductor strip crosses over each other, and the gate-covered portion of the semiconductor strip serves as a channel region.

Dynamic random access memory cell and fabricating method thereof

A method of forming a semiconductor device with a polysilicon layer having a multi-layer tungsten-silicide (WSi ) film formed on a surface thereof includes the steps of (1) forming a first layer of tungsten-silicide on the surface of the polysilicon layer; (2) forming a second layer of a material selected from tungsten and silicon on the first layer; (3) forming a third layer of tungsten-silicide on the second layer; and (4) thermally treating the multi-layer film resulting from steps (a)-(c) to form a multi-layer WSi film on the surface of the polysilicon layer, the multi-layer WSi film having a uniform small grain size. In various embodiments, steps (1)-(3) may be repeated one or more times. A semiconductor device includes a semiconductor body having a polysilicon layer formed on a surface thereof and a multilayered WSi film formed on a surface of the polysilicon layer by the process described above.

Method of forming a semiconductor device with a multi-layer WSix film with small grain size structure

A sputter cleaning system and method are described which provide improved temperature control of the pedestal and thus of a substrate being sputter cleaned. The sputter cleaning system comprises a conducting metal pedestal to provide a conducting surface beneath a substrate being sputter processed. A cooling channel is formed in the metal pedestal. In one example the cooling channel typically is made up of a number of concentric, interconnected, circular cooling sub-channels. Other shape cooling channels, such as radial, can also be used. An inlet tube delivers a cooling liquid, such as water, to the cooling channel and an exhaust tube removes the cooling liquid from the cooling channel thereby removing heat from the pedestal. The cooling liquid removes heat from the pedestal, thereby controlling the temperature of the pedestal and the substrate undergoing sputter cleaning.

Pedestal design for a sputter clean chamber to improve aluminum gap filling ability

The invention provides a method using plasma burn-in for maintaining cleanness within a vacuum chamber of a physical vapor deposition system, thereby reducing particles falling upon a processed wafer. When the operation pressure of the plasma for plasma burn-in is elevated above 10 mtorr, the distribution of the plasma is ever changed and able to enter the narrow space between the metal target side surface and an inner wall of the vacuum chamber so as to bombard the nodules on the side surface and to deposit a metal film upon the brittle metal compound film within the vacuum chamber for reducing the number of particles falling upon the wafer.

Method for maintaining the cleanness of a vacuum chamber of a physical vapor deposition system

An apparatus for the rapid thermal processing of a semiconductor wafer is disclosed. The apparatus includes a preheat unit for preheating a gas composition, and a RTP reactor having a processing chamber and a heat source for heating the wafer. The processing chamber has a wafer holder, and a gas inlet and a gas outlet through which the preheated gas composition flows in and out of the processing chamber.

Rapid thermal processing method and apparatus

A mass flow controller (MFC) for controlling the fluid flow in a conduit is configured to include a flow command input for issuing a flow control command, a control unit accepting the flow control command for generating a control signal, a flow-sensing device including a plurality of temperature sensors, a sensor circuit and an amplifier, an actuator being driven by the control unit, and a valve member including a valve being adjusted by the actuator for controlling the fluid flow in the conduit, a distortion controller being distorted in response to the control signal, and an elastic body being distorted in response to an external force resulting from the distortion of the distortion controller for changing the orifice size in the conduit. In addition, the valve can be designed to be fixed instead of being mobile so as to reduce the occurrence of particles resulting from the mutual frictions emerging among the moving parts employed in the valve member.

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Taoyuan Hsien, Taiwan

Hsiao-Che Wu