The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Jul. 23, 2001
Hsiao-Che Wu, Hsinchu, TW;
Promos Technologies, Inc., Hsinchu, TW;
Abstract
A method of forming a semiconductor device with a polysilicon layer having a multi-layer tungsten-silicide (WSi ) film formed on a surface thereof includes the steps of (1) forming a first layer of tungsten-silicide on the surface of the polysilicon layer; (2) forming a second layer of a material selected from tungsten and silicon on the first layer; (3) forming a third layer of tungsten-silicide on the second layer; and (4) thermally treating the multi-layer film resulting from steps (a)-(c) to form a multi-layer WSi film on the surface of the polysilicon layer, the multi-layer WSi film having a uniform small grain size. In various embodiments, steps (1)-(3) may be repeated one or more times. A semiconductor device includes a semiconductor body having a polysilicon layer formed on a surface thereof and a multilayered WSi film formed on a surface of the polysilicon layer by the process described above.