The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Aug. 26, 2008
Chun-yu Lin, Kaohsiung, TW;
Chia-jung Liou, Taoyuan County, TW;
Cheng-hung Ku, Hsinchu, TW;
Feng-yuan Chiu, Hsinchu County, TW;
Chun-kuang Lin, Hsinchu County, TW;
Chih-chiang Huang, Taoyuan County, TW;
Chun-Yu Lin, Kaohsiung, TW;
Chia-Jung Liou, Taoyuan County, TW;
Cheng-Hung Ku, Hsinchu, TW;
Feng-Yuan Chiu, Hsinchu County, TW;
Chun-Kuang Lin, Hsinchu County, TW;
Chih-Chiang Huang, Taoyuan County, TW;
ProMOS Technologies Inc., Hsinchu, TW;
Abstract
A method for establishing a scattering bar rule for a mask pattern for fabricating a device is provided. The method is described as follows. First, at least one image simulation model is established according to the mask pattern and a process reference set used for fabricating the device based on the mask pattern. Next, a plurality of scattering bar reference sets is applied to the image simulation model so as to generate a plurality of simulation images, respectively. Further, a portion of the simulation images are selected to be a plurality of candidate layouts according to a screening criterion. Next, one of the candidate layouts is determined to be a pattern layout according to a selection rule, and the scattering bar reference set corresponding to the pattern layout is determined to be a scattering bar rule of the mask pattern.