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For the Inventor, By the Inventor

Hsinchu, Taiwan

Powerchip Semiconductor Corporation


USPTO Granted Patents = 269

% Expired Patents = 5.2

Trademarks = 1

Forward Citations = 1,518

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197 inventors (with patents filed for the assignee):

goldMedal Chih-Wei Hung (36 out of 54 patents)

silverMedal Cheng-Yuan Hsu (29 out of 43 patents)

bronzeMedal Ko-Hsing Chang (25 out of 31 patents)

4.  Da Sung (20 out of 21 patents)

5.  Shye-Lin Wu (18 out of 203 patents)

6.  Ching-Sung Yang (16 out of 67 patents)

7.  Wei-Zhe Wong (15 out of 28 patents)

8.  Pin-Yao Wang (14 out of 21 patents)

9.  Saysamone Pittikoun (13 out of 17 patents)

10.  Min-San Huang (13 out of 14 patents)

11.  Chiu-Tsung Huang (12 out of 17 patents)

12.  Hann-Jye Hsu (12 out of 12 patents)

13.  Liang-Chuan Lai (11 out of 12 patents)

14.  Hung-En Tai (11 out of 11 patents)

15.  Houng-Chi Wei (8 out of 8 patents)


Core Competencies:
Phase Change Memory
Flash Memory
Image Sensor
Capacitor Structure
NAND Flash
Semiconductor Device
Memory Programming
Data Access Method
Self-Aligned Contact
Non-Volatile Memory Device
Fabrication Method
Optical Mask

269 patents:

1. 7951668 - Process for fabricating crown capacitors of dram and capacitor structure (2011-05-31),
2. 7915660 - Junction-free NAND flash memory and fabricating method thereof (2011-03-29),
3. 7903470 - Integrated circuits and discharge circuits (2011-03-08),
4. 7875982 - Semiconductor device for preventing voids in the contact region and method of forming the same (2011-01-25),
5. 7855378 - Phase change memory devices and methods for fabricating the same (2010-12-21),
6. 7803692 - Manufacturing method of semiconductor device having self-aligned contact (2010-09-28),
7. 7778087 - Memory programming method and data access method (2010-08-17),
8. 7679163 - Phase-change memory element (2010-03-16),
9. 7679157 - Image sensor and fabrication method thereof (2010-03-16),
10. 7679075 - Phase change memory array and fabrication thereof (2010-03-16),
11. 7678606 - Phase change memory device and fabrication method thereof (2010-03-16),
12. 7675054 - Phase change memory devices and methods for fabricating the same (2010-03-09),
13. 7672176 - Writing circuit for a phase change memory (2010-03-02),
14. 7671385 - Image sensor and fabrication method thereof (2010-03-02),
15. 7670869 - Semiconductor device and fabrications thereof (2010-03-02),
Company Overview
Powerchip Semiconductor Corporation, based in Hsinchu, Taiwan, specializes in the development and manufacturing of non-volatile memory solutions. The company focuses on advanced technologies such as Phase Change Memory and Flash Memory, alongside innovations in image sensors and capacitor structures. Powerchip is dedicated to enhancing semiconductor devices and memory programming techniques, contributing significantly to the semiconductor industry with its expertise in data access methods and NAND Flash technology.
Profile summary synthesized from public USPTO records and patent filings.

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USPTO Data Jan 1 1976 - Oct 6 2026

269 Patents

#33 in Hsinchu

#106 in Taiwan

#3,263 in the World

Hsinchu, TW
Hsinchu, Taiwan

Powerchip Semiconductor Corporation

Forward Citations = 1,518

197 inventors:

goldMedal Chih-Wei Hung (36 out of 54 patents)

silverMedal Cheng-Yuan Hsu (29 out of 43 patents)

bronzeMedal Ko-Hsing Chang (25 out of 31 patents)

4.  Da Sung (20 out of 21 patents)

5.  Shye-Lin Wu (18 out of 203 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Powerchip Semiconductor Corporation. Retrieved from https://idiyas.com/company/powerchip-semiconductor

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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