The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Dec. 16, 2008
Chun-yi Tu, Hsinchu, TW;
Te-chang Tseng, Hsinchu County, TW;
Hideki Arakawa, Yokohama, JP;
Takeshi Nakayama, Sanda, JP;
Chun-Yi Tu, Hsinchu, TW;
Te-Chang Tseng, Hsinchu County, TW;
Hideki Arakawa, Yokohama, JP;
Takeshi Nakayama, Sanda, JP;
Powerchip Semiconductor Corp., Hsin-Chu, TW;
Abstract
A memory programming method is provided. A first programming operation is performed to program a multi level cell from an initial state to a first target state, which corresponds to a storage data and has a first threshold voltage range. A flag bit of the NAND flash is set to a first state to indicate that the first programming operation has been performed. A second programming operation is performed to program the multi level cell from the first target state to a second target state, which corresponds to the storage data and has a second threshold voltage range. The flag bit is set to a second state to indicate that the second programming operation has been performed.