The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Jan. 17, 2008
Li-shu Tu, Taoyuan County, TW;
Li-Shu Tu, Taoyuan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Powerchip Semiconductor Corp., Hsin-Chu, TW;
Nanya Technology Corporation, Taoyuan, TW;
ProMOS Technologies Inc., Hsinchu, TW;
Winbond Electronics Corp., Hsinchu, TW;
Abstract
Phase change memory devices and methods for fabricating the same are provided. A phase change memory device includes a first conductive electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer. A phase change material layer is disposed in the second dielectric layer and electrically connected to the first conductive electrode. A space is disposed in the second dielectric layer to at least isolate a sidewall of the phase change material layer and the second dielectric layer adjacent thereto. A second conductive electrode is disposed in the second dielectric layer and electrically connected to the phase change material layer.