The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Oct. 29, 2007
Applicant:
Tu-hao Yu, Hsinchu, TW;
Inventor:
Tu-Hao Yu, Hsinchu, TW;
Assignees:
Industrial Technology Research Institute, Hsinchu, TW;
Powerchip Semiconductor Corp., Hsin-Chu, TW;
Nanya Technology Corporation, Kueishan Taoyuan, TW;
Promos Technologies Inc., Hsinchu, TW;
Windbond Electronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory device is disclosed. A pillar structure comprises a first electrode layer, a dielectric layer overlying the first electrode layer, and a second electrode layer overlying the dielectric layer. A phase change layer covers a surrounding of the pillar structure. A bottom electrode electrically connects the first electrode layer of the pillar structure. A top electrode electrically connects the second electrode layer of the pillar structure.