The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Aug. 08, 2008
Satoshi Abe, Hyogo, JP;
Satoshi Abe, Hyogo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Powerchip Semiconductor Corp., Hsinchu, TW;
Abstract
A semiconductor device includes: an interlayer insulation film; a lower interconnection layer; an upper interconnection layer; and a via hole extending through the interlayer insulation film to establish electric connection between the lower and upper interconnections; wherein a plurality of interconnection lines is provided in the lower interconnection layer, and a contact region is formed for contact with the via hole by partially joining at least two interconnection lines, and a void exists in a first region of the interlayer insulation film located between adjacent interconnection lines, and no void exists in a second region of the interlayer insulation film located between a contacting portion of the via hole in the contact region and an interconnection line adjacent to the contact region, whereby reliably preventing any contact between a via hole and a void formed in an interlayer insulation film even when the via hole is greatly displaced.