The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Sep. 04, 2007
Applicant:
Frederick T Chen, Hsinchu, TW;
Inventor:
Frederick T Chen, Hsinchu, TW;
Assignees:
Industrial Technology Research Institute, Hsinchu, TW;
Powerchip Semiconductor Corp., Hsin-Chu, TW;
Nanya Technology Corporation, Taoyuan, TW;
ProMOS Technologies Inc., Hsinchu, TW;
Winbond Electronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase change memory device is disclosed. A second conductive spacer is under a first conductive spacer. A phase change layer comprises a first portion substantially parallel to the first and second conductive spacers and a second portion on top of the second conductive spacer, wherein the second conductive spacer is electrically connected to the first conductive spacer through the second portion of the phase change layer.