The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Nov. 30, 2007
Pei-chia Chiang, Taipei, TW;
Shyh-shyuan Sheu, Taichung, TW;
Lieh-chiu Lin, Kaohsiung, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Powerchip Semiconductor Corp., Hsin-Chu, TW;
Nanya Technology Corporation, Kuelshan, Taoyuan, TW;
Promos Technologies Inc., Hsinchu, TW;
Winbond Electronics Corp., Hsinchu, TW;
Abstract
A writing circuit for a phase change memory is provided. The writing circuit comprises a driving current generating circuit, a first switch device, a first memory cell and a second switch device. The driving current generating circuit provides a writing current to the first memory cell. The first switch device is coupled to the driving current generating circuit. The first memory cell is coupled between the first switch device and the second switch device. The second switch device is coupled between the first memory cell and a ground, wherein when the driving current generating circuit outputs the writing current to the first memory cell, the second switch device is turned on after the first switch device has been turned on for a first predetermined time period.