The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
May. 19, 2009
Houng-chi Wei, Hsinchu, TW;
Shi-hsien Chen, Hsinchu, TW;
Hsin-heng Wang, Hsinchu County, TW;
Shih-hsiang Lin, Taipei County, TW;
Houng-Chi Wei, Hsinchu, TW;
Shi-Hsien Chen, Hsinchu, TW;
Hsin-Heng Wang, Hsinchu County, TW;
Shih-Hsiang Lin, Taipei County, TW;
Powerchip Semiconductor Corp., Hsinchu, TW;
Abstract
A junction-free NAND flash memory is described, including a substrate, memory cells, source/drain inducing (SDI) gates electrically connected with each other, and a dielectric material layer. The memory cells are disposed on the substrate, wherein each memory cell includes a charge storage layer. Each SDI gate is disposed between two neighboring memory cells. The dielectric material layer is disposed between the memory cells and the SDI gates and between the SDI gates and the substrate.