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For the Inventor, By the Inventor

Hsinchu, Taiwan

Ji-Feng Ying

This inventor holds 36 USPTO granted patents and 4 published patent applications, primarily in Magnetic Memory Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji-Feng Ying. Retrieved from https://idiyas.com/inventor/ji-feng-ying

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 36 

% Patents Active = 94.4

Average Co-Inventor Count = 2.5

ph-index = 4

Forward Citations = 44(Granted Patents)


Company Filing History:

goldMedal36 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2019-2026

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Areas of Expertise:
Magnetic Random Access Memory
MRAM Fabrication
Magnetic Tunneling Junction
Crystal Seed Layer
Magnetic Device
Memory Cell
Metrology Techniques
Magnetic Field Strength
Assisted Write Method
Memory Device Testing
Magnetic Detection Circuit
Nonvolatile Memory
36 patents (USPTO):Explore Patents
1. 12638522 - Method and apparatus for measuring magnetic field strength (2026-05-26),
2. 12635146 - Memory cell with a buffer layer and its fabrication process (2026-05-19),
3. 12424255 - Crystal seed layer for magnetic random access memory (MRAM) (2025-09-23),
4. 12382841 - Magnetic device and magnetic random access memory (2025-08-05),
5. 12302587 - Memory device and semiconductor die, and method of fabricating memory device (2025-05-13),
6. 12300293 - Method for writing to magnetic random access memory (2025-05-13),
7. 12082511 - Magnetic random access memory (2024-09-03),
8. 12075631 - Magnetic random access memory and manufacturing method thereof (2024-08-27),
9. 12035636 - Magnetic device and magnetic random access memory (2024-07-09),
10. 12029046 - Magnetic tunneling junction (MTJ) element with an amorphous buffer layer and its fabrication process (2024-07-02),
11. 11842757 - Crystal seed layer for magnetic random access memory (MRAM) (2023-12-12),
12. 11825664 - Memory device and semiconductor die, and method of fabricating memory device (2023-11-21),
13. 11762046 - Method and apparatus for measuring magnetic field strength (2023-09-19),
14. 11727974 - Method for writing to magnetic random access memory (2023-08-15),
15. 11672185 - Magnetic device and magnetic random access memory (2023-06-06),

Title: Ji-Feng Ying: Pioneering Inventor from Hsinchu

Introduction: Ji-Feng Ying is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Ji-Feng Ying holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse expertise and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Ji-Feng Ying has worked with leading tech companies and research institutions, spearheading projects that have revolutionized various industries.

Collaborations: Throughout his career, Ji-Feng Ying has collaborated with top researchers, engineers, and scientists globally, fostering a culture of innovation and knowledge exchange.

Conclusion: Ji-Feng Ying's passion for innovation, coupled with his relentless drive to push the boundaries of technology, solidifies his position as a trailblazing inventor in the vibrant city of Hsinchu, Taiwan.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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