The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Jun. 27, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Baohua Niu, Portland, OR (US);
Ji-Feng Ying, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/10 (2006.01); G11C 11/16 (2006.01); H01L 21/62 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 59/00 (2023.01);
U.S. Cl.
CPC ...
H10N 50/85 (2023.02); G11C 11/161 (2013.01); H01L 21/62 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 59/00 (2023.02); G11C 11/1673 (2013.01); H10B 61/22 (2023.02);
Abstract
A memory cell of a magnetic random access memory includes multiple layers disposed between a first metal layer and a second metal layer. At least one of the multiple layers include one selected from the group consisting of an iridium layer, a bilayer structure of an iridium layer and an iridium oxide layer, an iridium-titanium nitride layer, a bilayer structure of an iridium layer and a tantalum layer, and a binary alloy layer of iridium and tantalum.