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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12382841 B1

PDFFull Text
Date of Patent:
Aug. 05, 2025

Filed:

May. 29, 2024

Magnetic device and magnetic random access memory

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ji-Feng Ying, Hsinchu, TW;

Jhong-Sheng Wang, Taichung, TW;

Tsann Lin, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

STUDEBAKER BRACKETT PLLC

Primary Examiner:

Hien N Nguyen

Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 11/161 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); H01F 10/3254 (2013.01); H01F 10/329 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02); H10N 52/80 (2023.02);
Abstract

A magnetic memory includes a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT-STT hybrid magnetic devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.

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