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For the Inventor, By the Inventor

Taichung, Taiwan

Jhong-Sheng Wang

This inventor holds 26 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jhong-Sheng Wang. Retrieved from https://idiyas.com/inventor/jhong-sheng-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 88.5

Average Co-Inventor Count = 3.1

ph-index = 4

Forward Citations = 28(Granted Patents)


Location History:

  • Taichung, TW (2016 - 2024)
  • Hsinchu, TW (2023 - 2024)

Company Filing History:

goldMedal26 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2026

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Areas of Expertise:
Semiconductor Device
FinFET
Magnetic RAM
Thermoelectric Devices
Memory Fabrication
Breakdown Resistance
Assisted Write Method
Resistive Memory Cell
Integrated Circuits
Transistor Manufacturing
Heat Generation
Memory Device
26 patents (USPTO):Explore Patents
1. 12622044 - Method of making breakdown resistant semiconductor device (2026-05-05),
2. 12382841 - Magnetic device and magnetic random access memory (2025-08-05),
3. 12302587 - Memory device and semiconductor die, and method of fabricating memory device (2025-05-13),
4. 12300293 - Method for writing to magnetic random access memory (2025-05-13),
5. 12046638 - Fin field effect transistor (FinFET) device having position-dependent heat generation (2024-07-23),
6. 12035636 - Magnetic device and magnetic random access memory (2024-07-09),
7. 11825664 - Memory device and semiconductor die, and method of fabricating memory device (2023-11-21),
8. 11727974 - Method for writing to magnetic random access memory (2023-08-15),
9. 11672185 - Magnetic device and magnetic random access memory (2023-06-06),
10. 11631796 - Integrated thermoelectric devices in Fin FET technology (2023-04-18),
11. 11616124 - Method of making fin field effect transistor (FinFET) device (2023-03-28),
12. 11424399 - Integrated thermoelectric devices in Fin FET technology (2022-08-23),
13. 11289538 - Memory device and semiconductor die, and method of fabricating memory device (2022-03-29),
14. 11244714 - Assisted write method for magnetic random access memory (2022-02-08),
15. 11238911 - Method for writing to magnetic random access memory (2022-02-01),

Title: The Innovative Journey of Jhong-Sheng Wang

Introduction: Jhong-Sheng Wang, a talented inventor hailing from Taichung, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Wang's latest patents include a cutting-edge smart home device that revolutionizes the way we interact with our living spaces, and a sustainable energy solution that aims to tackle environmental challenges.

Career Highlights: With a career spanning over two decades, Wang has established himself as a visionary in the tech industry. His work has been recognized globally, earning him prestigious awards for his inventive solutions.

Collaborations: Wang has collaborated with leading tech companies and research institutions to further develop his inventions. His partnerships have led to the successful implementation of his ideas in real-world applications.

Conclusion: Jhong-Sheng Wang's relentless pursuit of innovation and his passion for creating technology that enhances our lives make him a true pioneer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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