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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11244714 B1

PDFFull Text
Date of Patent:
Feb. 08, 2022

Filed:

Feb. 08, 2021

Assisted write method for magnetic random access memory

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ji-Feng Ying, Hsinchu, TW;

Jhong-Sheng Wang, Taichung, TW;

Duen-Huei Hou, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Pho M Luu

Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01L 21/66 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); H01F 10/3254 (2013.01); H01L 22/14 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01);
Abstract

A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.

Find Patent Forward Citations

Ying, Ji-Feng. (2022). Assisted write method for magnetic random access memory (U.S. Patent No. 11244714). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11244714

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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