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For the Inventor, By the Inventor

Hsinchu, Taiwan

Rainer Yen-Chieh Huang

This inventor holds 20 USPTO granted patents and 4 published patent applications, primarily in Ferroelectric Memory Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rainer Yen-Chieh Huang. Retrieved from https://idiyas.com/inventor/rainer-yen-chieh-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 100.0

Average Co-Inventor Count = 3.5

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Hsinchu, TW (2022 - 2023)
  • Changhua County, TW (2023 - 2024)

Company Filing History:

goldMedal20 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2022-2026

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Areas of Expertise:
Ferroelectric Memory
Memory Device
Ferroelectric Properties
Manufacturing Method
Stacked Structure
Carrier Barrier Layer
Charge Mobility
FET FeRAM
Annealed Seed Layer
Cocktail Layer
Threshold Voltage
Organic Gate TFT
20 patents (USPTO):Explore Patents
1. 12660252 - Ferroelectric memory devices having improved ferroelectric properties and methods of making the same (2026-06-16),
2. 12453137 - Ferroelectric memory devices having improved ferroelectric properties and methods of making the same (2025-10-21),
3. 12324161 - Annealed seed layer to improve ferroelectric properties of memory layer (2025-06-03),
4. 12274068 - Method of forming ferroelectric memory device (2025-04-08),
5. 12238932 - Ferroelectric memory device, manufacturing method of the ferroelectric memory device and semiconductor chip (2025-02-25),
6. 12232329 - Stacked ferroelectric structure (2025-02-18),
7. 12207474 - Stacked ferroelectric structure (2025-01-21),
8. 12154965 - Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory device (2024-11-26),
9. 12127411 - Cocktail layer over gate dielectric layer of FET FeRAM (2024-10-22),
10. 12114507 - Capping layer over FET FeRAM to increase charge mobility (2024-10-08),
11. 11917831 - Annealed seed layer to improve ferroelectric properties of memory layer (2024-02-27),
12. 11818896 - Cocktail layer over gate dielectric layer of FET FeRAM (2023-11-14),
13. 11778914 - Organic gate TFT-type stress sensors and method of making and using the same (2023-10-03),
14. 11769815 - Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory device (2023-09-26),
15. 11729990 - Capping layer over FET FeRAM to increase charge mobility (2023-08-15),

Title: Rainer Yen-Chieh Huang: Innovator from Hsinchu

Introduction: Rainer Yen-Chieh Huang is a distinguished inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Huang's most recent patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips with enhanced processing capabilities.

Career Highlights: With a career spanning over two decades, Huang has held key positions in various tech companies, leading research and development teams to create innovative solutions that have shaped the industry.

Collaborations: Throughout his career, Huang has collaborated with leading researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing in the tech community.

Conclusion: Rainer Yen-Chieh Huang's dedication to pushing the boundaries of technology and his passion for innovation continue to inspire the next generation of inventors and researchers in Hsinchu and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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