The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Aug. 02, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Rainer Yen-Chieh Huang, Changhua County, TW;

Hai-Ching Chen, Hsinchu, TW;

Chung-Te Lin, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 23/522 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02); H01L 23/5226 (2013.01); H01L 29/40111 (2019.08); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09);
Abstract

In some embodiments, the present disclosure relates to an integrated chip that includes a gate electrode arranged over a substrate. A gate dielectric layer is arranged over the gate electrode, and an active structure is arranged over the gate dielectric layer. A source contact and a drain contact are arranged over the active structure. The active structure includes a stack of cocktail layers alternating with first active layers. The cocktail layers include a mixture of a first material and a second material. The first active layers include a third material that is different than the first and second materials. The bottommost layer of the active structure is one of the cocktail layers.


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