The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Aug. 11, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Song-Fu Liao, Taipei, TW;
Kuo-Chang Chiang, Hsinchu, TW;
Hai-Ching Chen, Hsinchu, TW;
Chung-Te Lin, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2005.12); H01L 23/528 (2005.12); H10B 51/20 (2022.12); H10D 30/01 (2024.12); H10D 30/69 (2024.12); H10D 64/68 (2024.12);
U.S. Cl.
CPC ...
H10B 51/20 (2023.01); H01L 23/5283 (2012.12); H10D 30/0415 (2024.12); H10D 30/701 (2024.12); H10D 64/689 (2024.12);
Abstract
A method of fabricating a transistor structure is provided. The method comprises forming a gate electrode in a dielectric layer of an interconnect structure; forming a monolayer on a portion of the dielectric layer laterally spaced from the gate electrode; sequentially forming a ferroelectric layer, a barrier layer and a channel layer on the gate electrode; and forming a source/drain electrode on the channel layer.