The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Aug. 12, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuo-Chang Chiang, Hsinchu, TW;
Yu-Chuan Shih, Hsinchu, TW;
Chun-Chieh Lu, Taipei, TW;
Po-Ting Lin, Taichung, TW;
Hai-Ching Chen, Hsinchu, TW;
Sai-Hooi Yeong, Hsinchu County, TW;
Yu-Ming Lin, Hsinchu, TW;
Chung-Te Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Provided are a ferroelectric memory device and a method of forming the same. The ferroelectric memory device includes: a gate electrode; a ferroelectric layer, disposed on the gate electrode; a channel layer, disposed on the ferroelectric layer; a pair of source/drain (S/D) electrodes, disposed on the channel layer; a first insertion layer, disposed between the gate electrode and the ferroelectric layer; and a second insertion layer, disposed between the ferroelectric layer and the channel layer, wherein the second insertion layer has a thickness less than a thickness of the first insertion layer.