Yu-Chuan Shih

Title: Yu-Chuan Shih: Innovator in Ferroelectric Memory Devices

Introduction

Yu-Chuan Shih is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of ferroelectric memory devices. With a total of two patents to his name, Shih's work is at the forefront of innovation in this area.

Latest Patents

Shih's latest patents include a ferroelectric memory device and a method of forming the same. This invention features a gate electrode, a ferroelectric layer, a channel layer, and a pair of source/drain electrodes. Additionally, it incorporates a first insertion layer between the gate electrode and the ferroelectric layer, as well as a second insertion layer between the ferroelectric layer and the channel layer, with the second layer being thinner than the first. Another notable patent involves semiconductor devices that include a ferroelectric layer and a first alignment layer made of rare-earth metal oxide, positioned between the first and second electrode layers.

Career Highlights

Yu-Chuan Shih is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., a leading firm in the semiconductor industry. His work has been instrumental in advancing the capabilities of memory devices, which are crucial for modern electronic applications.

Collaborations

Shih has collaborated with notable colleagues, including Chun-Chieh Lu and Yu-Ming Lin, contributing to a dynamic research environment that fosters innovation.

Conclusion

Yu-Chuan Shih's contributions to the field of ferroelectric memory devices highlight his role as a key innovator in semiconductor technology. His patents reflect a commitment to advancing the capabilities of electronic memory systems.