The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
May. 10, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Chieh Lu, Taipei, TW;
Qing Shi, Hsinchu, TW;
Bo-Feng Young, Taipei, TW;
Yu-Chuan Shih, Hsinchu, TW;
Sai-Hooi Yeong, Hsinchu County, TW;
Blanka Magyari-Kope, Hsinchu County, TW;
Ying-Chih Chen, Hsinchu County, TW;
Tzer-Min Shen, Hsinchu, TW;
Yu-Ming Lin, Hsinchu, TW;
Chung-Te Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a first electrode layer, a ferroelectric layer, a first alignment layer and a second electrode layer. A material of the first alignment layer includes rare-earth metal oxide. The ferroelectric layer and the first alignment layer are disposed between the first electrode layer and the second electrode layer, and the first alignment layer is disposed between the ferroelectric layer and the first electrode layer.