This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Qing Shi: Innovator in Semiconductor Technology
Introduction
Qing Shi is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.
Latest Patents
Qing Shi holds a patent for semiconductor devices that include a ferroelectric layer and a unique FTJ structure. This semiconductor device features a first electrode layer, a ferroelectric layer, a first alignment layer, and a second electrode layer. Notably, the material of the first alignment layer consists of rare-earth metal oxide. The arrangement of these layers is designed to enhance the performance and efficiency of semiconductor devices.
Career Highlights
Qing Shi is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on advancing semiconductor technologies that are crucial for modern electronic devices.
Collaborations
Some of his coworkers include Chun-Chieh Lu and Bo-Feng Young, who contribute to the innovative environment at Taiwan Semiconductor Manufacturing Company Limited.
Conclusion
Qing Shi's contributions to semiconductor technology through his patent demonstrate his commitment to innovation in the field. His work continues to influence the development of advanced electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile