Hsinchu, Taiwan

Qing Shi

USPTO Granted Patents = 1 

Average Co-Inventor Count = 10.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):

Title: Qing Shi: Innovator in Semiconductor Technology

Introduction

Qing Shi is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Qing Shi holds a patent for semiconductor devices that include a ferroelectric layer and a unique FTJ structure. This semiconductor device features a first electrode layer, a ferroelectric layer, a first alignment layer, and a second electrode layer. Notably, the material of the first alignment layer consists of rare-earth metal oxide. The arrangement of these layers is designed to enhance the performance and efficiency of semiconductor devices.

Career Highlights

Qing Shi is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on advancing semiconductor technologies that are crucial for modern electronic devices.

Collaborations

Some of his coworkers include Chun-Chieh Lu and Bo-Feng Young, who contribute to the innovative environment at Taiwan Semiconductor Manufacturing Company Limited.

Conclusion

Qing Shi's contributions to semiconductor technology through his patent demonstrate his commitment to innovation in the field. His work continues to influence the development of advanced electronic devices.

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