Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Chuan Shih

Yu-Ming Lin

Chung-Te Lin

Chun-Chieh Lu

Sai-Hooi Yeong

Hai-Ching Chen

Bo-Feng Young

Tzer-Min Shen

Kuo-Chang Chiang

Ying-Chih Chen

Po-Ting Lin

Sai-hooi Yeong

Blanka Magyari-Kope

Qing Shi

Provided are a ferroelectric memory device and a method of forming the same. The ferroelectric memory device includes: a gate electrode; a ferroelectric layer, disposed on the gate electrode; a channel layer, disposed on the ferroelectric layer; a pair of source/drain (S/D) electrodes, disposed on the channel layer; a first insertion layer, disposed between the gate electrode and the ferroelectric layer; and a second insertion layer, disposed between the ferroelectric layer and the channel layer, wherein the second insertion layer has a thickness less than a thickness of the first insertion layer.

Ferroelectric memory device and method of forming the same

A semiconductor device includes a first electrode layer, a ferroelectric layer, a first alignment layer and a second electrode layer. A material of the first alignment layer includes rare-earth metal oxide. The ferroelectric layer and the first alignment layer are disposed between the first electrode layer and the second electrode layer, and the first alignment layer is disposed between the ferroelectric layer and the first electrode layer.

Semiconductor devices including FTJ structure

Growing community of inventors

Hsinchu, Taiwan

Yu-Chuan Shih