Hsinchu, Taiwan

Po-Ting Lin

Average Co-Inventor Count = 5.4

ph-index = 1

Forward Citations = 3(Granted Patents)

Forward Citations (Not Self Cited) = 1(Sep 21, 2024)

Location History:

  • Taichung, TW (2023)
  • Hsinchu, TW (2022 - 2024)


Years Active: 2022-2025

where 'Filed Patents' based on already Granted Patents

13 patents (USPTO):

Title: The Innovative Contributions of Po-Ting Lin

Introduction

Po-Ting Lin is a renowned inventor based in Hsinchu, Taiwan, with an impressive portfolio comprising 10 patents. His work primarily focuses on advancements in semiconductor technologies, contributing significantly to the field through his innovative inventions.

Latest Patents

Among his latest patents, Po-Ting Lin has developed a novel transistor that incorporates an active region and methods for forming the same. This thin film transistor features a stack that includes an active layer, a gate dielectric, and a gate electrode arranged in either a forward or reverse order. The active layer is composed of a compound semiconductor material containing oxygen, alongside at least one acceptor-type element chosen from gallium (Ga) and tungsten (W), as well as one heavy post-transition metal element from indium (In) and tin (Sn). Notably, the atomic percentage of the heavy post-transition metal at the first surface portion, which is in contact with the gate dielectric, exceeds that at the second surface portion located on the opposite side. This innovative structure effectively enhances the front channel current while reducing back channel leakage current.

In addition, Lin has also patented a fin field effect transistor equipped with both conformal and non-conformal gate dielectric layers. This semiconductor device includes a method of formation that involves creating a fin that extends from a substrate and forming a gate dielectric layer along its top surface and sidewalls. The design features a first thickness of the gate dielectric layer along the fin's top surface that is greater than the second thickness along the sidewalls, optimizing performance and functionality.

Career Highlights

Po-Ting Lin's career is marked by his association with Taiwan Semiconductor Manufacturing Company, a leading player in the semiconductor industry. His contributions to innovative semiconductor design and manufacturing techniques have positioned him as a key figure in advancing electronic technologies.

Collaborations

Throughout his career, Lin has collaborated with talented coworkers, including Hai-Ching Chen and Yen-Chieh Huang. Together, they have pushed the boundaries of semiconductor research, fostering an environment of innovation and creative problem-solving.

Conclusion

Po-Ting Lin exemplifies the spirit of innovation within the semiconductor industry. His ten patents reflect his commitment to technological advancement and the impact of his work on enhancing electronic devices. As he continues to develop groundbreaking technologies, his contributions will undoubtedly shape the future of the industry.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…