The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Feb. 02, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yen-Chieh Huang, Changhua County, TW;

Po-Ting Lin, Taichung, TW;

Song-Fu Liao, Taipei, TW;

Hai-Ching Chen, Hsinchu, TW;

Sai-Hooi Yeong, Zhubei, TW;

Yu-Ming Lin, Hsinchu, TW;

Chung-Te Lin, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/42324 (2013.01); H01L 29/516 (2013.01); H01L 29/6656 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09);
Abstract

Various embodiments of the present disclosure are directed towards an integrated chip (IC) comprising a lower gate electrode disposed in a dielectric structure. A first ferroelectric structure overlies the lower gate electrode. A first floating electrode structure overlies the first ferroelectric structure. A channel structure overlies the first floating electrode structure. A second floating electrode structure overlies the channel structure. A second ferroelectric structure overlies the second floating electrode structure. An upper gate electrode overlies the second ferroelectric structure.


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