The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Yen-Chieh Huang, Hsinchu, TW;
Po-Ting Lin, Hsinchu, TW;
Hai-Ching Chen, Hsinchu, TW;
Song-Fu Liao, Hsinchu, TW;
Yu-Ming Lin, Hsinchu, TW;
Chung-Te Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
Ferroelectric structures, including a ferroelectric field effect transistors (FeFETs), and methods of making the same are disclosed which have improved ferroelectric properties and device performance. A FeFET device including a ferroelectric material gate dielectric layer and a metal oxide semiconductor channel layer is disclosed having improved ferroelectric characteristics, such as increased remnant polarization, low defects, and increased carrier mobility for improved device performance.