Taiwan Semiconductor Manufacturing Comp. Ltd.

Po-Ting Lin

Hai-Ching Chen

Chung-Te Lin

Yu-Ming Lin

Yen-Chieh Huang

Song-Fu Liao

Sai-Hooi Yeong

Wu-Wei Tsai

Chi On Chui

Chun-Chieh Lu

Xiong-Fei Yu

Kai-Wen Cheng

Kuo-Chang Chiang

Wei-Chih Wen

Chia-Yuan Chang

Kuei-Lun Lin

Sai-hooi Yeong

Yen-Fu Chen

Yu-Chuan Shih

Yu-Ming Hsiang

Yan-Yi Chen

A thin film transistor includes an active layer and at least one gate stack. The active layer may be formed using multiple iterations of a unit layer stack deposition process, which includes an acceptor-type oxide deposition process and a post-transition metal oxide deposition process. A surface of each gate dielectric within the at least one gate stack contacts a surface of a respective layer of the oxide of the acceptor-type element so that leakage current of the active layer may be minimized. A source electrode and a drain electrode may contact an oxide layer providing lower contact resistance such as a layer of the post-transition metal oxide or a zinc oxide layer within the active layer.

Thin film transistor including a compositionally-modulated active region and methods for forming the same

Provided are a ferroelectric memory device and a method of forming the same. The ferroelectric memory device includes: a gate electrode; a ferroelectric layer, disposed on the gate electrode; a channel layer, disposed on the ferroelectric layer; a pair of source/drain (S/D) electrodes, disposed on the channel layer; a first insertion layer, disposed between the gate electrode and the ferroelectric layer; and a second insertion layer, disposed between the ferroelectric layer and the channel layer, wherein the second insertion layer has a thickness less than a thickness of the first insertion layer.

Ferroelectric memory device and method of forming the same

A memory device and a manufacturing method thereof is described. The memory device includes a transistor structure over a substrate and a ferroelectric capacitor structure electrically connected with the transistor structure. The ferroelectric capacitor structure includes a top electrode layer, a bottom electrode layer and a ferroelectric stack sandwiched there-between. The ferroelectric stack includes a first ferroelectric layer, a first stabilizing layer, and one of a second ferroelectric layer or a second stabilizing layer. Materials of the first stabilizing layer and a second stabilizing layer include a metal oxide material.

Semiconductor device and manufacturing method thereof

A thin film transistor includes a stack of an active layer, a gate dielectric, and a gate electrode in a forward or in a reverse order. The active layer includes a compound semiconductor material containing oxygen, at least one acceptor-type element selected from Ga and W, and at least one heavy post-transition metal element selected from In and Sn. An atomic percentage of the at least one heavy post-transition metal element at a first surface portion of the active layer that contacts the gate dielectric is higher than an atomic percentage of the at least one heavy post-transition metal element at a second surface portion of the active layer located on an opposite side of the gate dielectric. The front channel current may be increased, and the back channel leakage current may be decreased.

Transistor including an active region and methods for forming the same

A semiconductor device a method of forming the same are provided. The method includes forming a fin extending from a substrate and forming a gate dielectric layer along a top surface and sidewalls of the fin. A first thickness of the gate dielectric layer along the top surface of the fin is greater than a second thickness of the gate dielectric layer along the sidewalls of the fin.

Fin field effect transistor having conformal and non-conformal gate dielectric layers

Various embodiments of the present disclosure are directed towards an integrated chip (IC) comprising a lower gate electrode disposed in a dielectric structure. A first ferroelectric structure overlies the lower gate electrode. A first floating electrode structure overlies the first ferroelectric structure. A channel structure overlies the first floating electrode structure. A second floating electrode structure overlies the channel structure. A second ferroelectric structure overlies the second floating electrode structure. An upper gate electrode overlies the second ferroelectric structure.

Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) structure

A semiconductor device is described. The semiconductor device includes a substrate and a metal layer disposed on the substrate. A seed layer is formed on the metal layer. A ferroelectric gate layer is formed on the seed layer. A channel layer is formed over the ferroelectric gate layer. The seed layer is arranged to increase the orthorhombic phase fraction of the ferroelectric gate layer.

Semiconductor devices with ferroelectric layer and methods of manufacturing thereof

A ferroelectric field effect transistor (FeFET) having a double-gate structure includes a first gate electrode, a first ferroelectric material layer over the first gate electrode, a semiconductor channel layer over the first ferroelectric material layer, source and drain electrodes contacting the semiconductor channel layer, a second ferroelectric material layer over the semiconductor channel layer, and a second gate electrode over the second ferroelectric material layer.

Double gate ferroelectric field effect transistor devices and methods for forming the same

Ferroelectric structures, including a ferroelectric field effect transistors (FeFETs), and methods of making the same are disclosed which have improved ferroelectric properties and device performance. A FeFET device including a ferroelectric material gate dielectric layer and a metal oxide semiconductor channel layer is disclosed having improved ferroelectric characteristics, such as increased remnant polarization, low defects, and increased carrier mobility for improved device performance.

Ferroelectric field effect transistor devices and methods for forming the same

In some embodiments, the present disclosure relates to a method for forming an integrated circuit (IC), including forming a first electrode layer having a first metal over a substrate, performing a first atomic layer deposition (ALD) pulse that exposes the first electrode layer to oxygen atoms, exposing the first electrode layer to a first temperature, the first temperature causing the first electrode layer to react with the oxygen atoms to form a seed structure over the first electrode layer, and performing a series of ALD pulses at a second temperature to form a ferroelectric structure over the seed structure. The second temperature is less than the first temperature and the ferroelectric structure is configured to store a data state.

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Hsinchu, Taiwan

Po-Ting Lin