The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Jan. 06, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yen-Chieh Huang, Changhua County, TW;
Po-Ting Lin, Taichung, TW;
Song-Fu Liao, Taipei, TW;
Hai-Ching Chen, Hsinchu, TW;
Chung-Te Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present disclosure relates to a method for forming an integrated circuit (IC), including forming a first electrode layer having a first metal over a substrate, performing a first atomic layer deposition (ALD) pulse that exposes the first electrode layer to oxygen atoms, exposing the first electrode layer to a first temperature, the first temperature causing the first electrode layer to react with the oxygen atoms to form a seed structure over the first electrode layer, and performing a series of ALD pulses at a second temperature to form a ferroelectric structure over the seed structure. The second temperature is less than the first temperature and the ferroelectric structure is configured to store a data state.