The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Jul. 04, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Po-Ting Lin, Taichung, TW;
Wei-Chih Wen, Hsinchu County, TW;
Kai-Wen Cheng, Taichung, TW;
Wu-Wei Tsai, Taoyuan, TW;
Yu-Ming Hsiang, New Taipei, TW;
Yan-Yi Chen, Taipei, TW;
Hai-Ching Chen, Hsinchu, TW;
Yu-Ming Lin, Hsinchu, TW;
Chung-Te Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A memory device and a manufacturing method thereof is described. The memory device includes a transistor structure over a substrate and a ferroelectric capacitor structure electrically connected with the transistor structure. The ferroelectric capacitor structure includes a top electrode layer, a bottom electrode layer and a ferroelectric stack sandwiched there-between. The ferroelectric stack includes a first ferroelectric layer, a first stabilizing layer, and one of a second ferroelectric layer or a second stabilizing layer. Materials of the first stabilizing layer and a second stabilizing layer include a metal oxide material.