Company Filing History:
Years Active: 2025
Title: Yu-Ming Hsiang: Innovator in Semiconductor Technology
Introduction
Yu-Ming Hsiang is a prominent inventor based in New Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in memory devices. His innovative work has led to the development of a unique patent that enhances the functionality and efficiency of memory devices.
Latest Patents
Yu-Ming Hsiang holds a patent for a semiconductor device and its manufacturing method. This patent describes a memory device that includes a transistor structure over a substrate, along with a ferroelectric capacitor structure that is electrically connected to the transistor. The ferroelectric capacitor structure consists of a top electrode layer, a bottom electrode layer, and a ferroelectric stack sandwiched in between. The ferroelectric stack is composed of a first ferroelectric layer, a first stabilizing layer, and either a second ferroelectric layer or a second stabilizing layer. Notably, the materials used for the first and second stabilizing layers include a metal oxide material.
Career Highlights
Yu-Ming Hsiang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to collaborate with other talented professionals in the field, further advancing semiconductor technology.
Collaborations
Some of Yu-Ming Hsiang's coworkers include Po-Ting Lin and Wei-Chih Wen. Their collaborative efforts contribute to the innovative projects at Taiwan Semiconductor Manufacturing Company Limited.
Conclusion
Yu-Ming Hsiang's contributions to semiconductor technology, particularly through his patent on memory devices, highlight his role as an influential inventor in the industry. His work continues to impact the development of advanced semiconductor solutions.