Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Ming Hsiang

Yu-Ming Lin

Chung-Te Lin

Hai-Ching Chen

Kai-Wen Cheng

Wei-Chih Wen

Po-Ting Lin

Wu-Wei Tsai

Yan-Yi Chen

A memory device and a manufacturing method thereof is described. The memory device includes a transistor structure over a substrate and a ferroelectric capacitor structure electrically connected with the transistor structure. The ferroelectric capacitor structure includes a top electrode layer, a bottom electrode layer and a ferroelectric stack sandwiched there-between. The ferroelectric stack includes a first ferroelectric layer, a first stabilizing layer, and one of a second ferroelectric layer or a second stabilizing layer. Materials of the first stabilizing layer and a second stabilizing layer include a metal oxide material.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Taipei, Taiwan

Yu-Ming Hsiang