Hsinchu, Taiwan

Sai-hooi Yeong

This inventor holds 18 USPTO granted patents and 18 published patent applications, primarily in Semiconductor Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., National Yang Ming Chiao Tung University, Taiwan Semiconductor Manuacturing Co., Ltd.. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sai-hooi Yeong. Retrieved from https://idiyas.com/inventor/sai-hooi-yeong-2bdp2vhn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 77.8

Average Co-Inventor Count = 4.7

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2024-2026

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Areas of Expertise:
Contact Air Gap
High Aspect Ratio Gate
Memory Device
Semiconductor Chip
Parasitic Capacitance
Ferroelectric Memory
Field Effect Transistors
Thin Film Transistor
Epitaxial Structures
Manufacturing Method
Self-Aligned Contact
Conformal Transfer Doping
18 patents (USPTO):Explore Patents

Title: Innovation in Integrated Circuit Fabrication: The Contributions of Sai-hooi Yeong

Introduction

Sai-hooi Yeong, an accomplished inventor based in Hsinchu County, Taiwan, has made significant strides in the field of integrated circuit fabrication. With a total of three patents to his name, Yeong's work showcases innovative methods and designs that contribute to the advancement of semiconductor technologies.

Latest Patents

Yeong's latest patents exemplify groundbreaking techniques in the creation and enhancement of electronic devices. One notable invention is the "Self-aligned contact air gap formation." This method involves a sophisticated process for fabricating integrated circuits that includes a device structure with various features such as a substrate, source/drain components, and a contact hole that integrates an air gap extending above the gate stack. This innovation enhances device performance by utilizing a meticulous arrangement of elements to minimize interference and optimize electrical connections.

Another of Yeong's significant contributions is the "Ferroelectric memory device and method of forming the same." This invention outlines a unique structure for a ferroelectric memory device, integrating multiple layers including a gate electrode, a ferroelectric layer, and source/drain electrodes. By innovating through the inclusion of insertion layers with varying thicknesses, Yeong's design improves the functionality and efficiency of memory devices, pushing the boundaries of current technology in ferroelectric materials.

Career Highlights

Sai-hooi Yeong has cultivated a successful career at Taiwan Semiconductor Manufacturing Company Limited (TSMC), a leader in the semiconductor industry. His expertise in integrated circuit fabrication continues to drive advancements in the field, with his patents reflecting a commitment to innovation and excellence.

Collaborations

Throughout his career, Yeong has collaborated with esteemed colleagues such as Feng-Cheng Yang and Chia-Ta Yu. These partnerships enrich his work and foster an environment of creativity and innovation, ultimately leading to significant technological advancements within their projects.

Conclusion

As an inventor, Sai-hooi Yeong stands out for his contributions to the field of integrated circuit fabrication. His latest patents not only illustrate his technical prowess but also demonstrate his dedication to pushing the envelope in semiconductor technology. With a strong career at TSMC and collaborative efforts with other talented professionals, Yeong's work is sure to leave a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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