The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Sep. 01, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Yang Ming Chiao Tung University, Hsinchu, TW;
Po-Tsun Liu, Hsinchu, TW;
Meng-Han Lin, Hsinchu, TW;
Zhen-Hao Li, Tainan, TW;
Tsung-Che Chiang, Taoyuan, TW;
Bo-Feng Young, Taipei, TW;
Hsin-Yi Huang, Taichung, TW;
Sai-Hooi Yeong, Hsinchu County, TW;
Yu-Ming Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Yang Ming Chiao Tung University, Hsinchu, TW;
Abstract
A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.