Hsin-Yi Huang

Title: Hsin-Yi Huang: Innovator in Semiconductor Technology

Introduction

Hsin-Yi Huang is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of transistors and memory devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this domain.

Latest Patents

Hsin-Yi Huang holds a patent for a "Transistor, memory device and manufacturing method of memory device." This invention includes a transistor that comprises a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode, and source and drain electrodes. The semiconductor nanosheet is physically connected to both the first and second semiconductor layers. The gate electrode wraps around the semiconductor nanosheet, while the source and drain electrodes are positioned at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is situated between the source and drain electrodes. This innovative design enhances the performance and efficiency of memory devices.

Career Highlights

Hsin-Yi Huang has worked with prominent organizations in the semiconductor industry. He has been associated with Taiwan Semiconductor Manufacturing Company Ltd., where he contributed to cutting-edge technology development. Additionally, he has been involved with National Yang Ming Chiao Tung University, furthering research and innovation in semiconductor applications.

Collaborations

Hsin-Yi Huang has collaborated with talented individuals in his field, including Po-Tsun Liu and Meng-Han Lin. These collaborations have fostered a creative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Hsin-Yi Huang is a distinguished inventor whose work in semiconductor technology has led to valuable innovations. His patent for a novel transistor design exemplifies his commitment to advancing the field. Through his career and collaborations, he continues to make a significant impact in the world of technology.