Taiwan Semiconductor Manufacturing Comp. Ltd.

National Yang Ming Chiao Tung University

Hsin-Yi Huang

Yu-Ming Lin

Meng-Han Lin

Bo-Feng Young

Po-Tsun Liu

Sai-hooi Yeong

Tsung-Che Chiang

Zhen-Hao Li

A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.

Transistor, memory device and manufacturing method of memory device

Growing community of inventors

Taichung, Taiwan

Hsin-Yi Huang