The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Jun. 04, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Cheng-Ming Lin, Kaohsiung, TW;
Sai-Hooi Yeong, Hsinchu County, TW;
Chi On Chui, Hsinchu, TW;
Ziwei Fang, Hsinchu, TW;
Huang-Lin Chao, Hillsboro, OR (US);
TAIWAN SEMICONDUCTIR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes gate spacers disposed over a semiconductor layer, a hafnium-containing dielectric layer, where a first portion of the hafnium-containing dielectric layer having a first thickness is disposed over the semiconductor layer and a second portion of the hafnium-containing dielectric layer having a second thickness is disposed along sidewalls of the gate spacers, and where the first thickness is greater than the second thickness, and a metal gate electrode disposed over the hafnium-containing dielectric layer and between the gate spacers.