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For the Inventor, By the Inventor

Hsinchu, Taiwan

Yu-Wei Jiang

USPTO Granted Patents = 66 

 

Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 198(Granted Patents)

Forward Citations (Not Self Cited) = 189(Dec 10, 2025)


Location History:

  • Taipei, TW (2023)
  • Hsinchu, TW (2015 - 2024)

Company Filing History:

goldMedal45 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal21 out of 3,602 
 
Macronix International Co., Ltd.
 patents

Years Active: 2015-2025

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Areas of Expertise:
Memory Device
Three-Dimensional Memory Array
Semiconductor Memory Structure
Integrated Circuit
Transistor Fabrication
Ferroelectric Random Access Memory
Memory Array Isolation Structures
Conductive Pillars
Oxide Semiconductor Transistor
High Selectivity Isolation Structure
Memory Array Source/Drain Electrode
Dummy Vertical Structures
66 patents (USPTO):Explore Patents
1. 12501700 - Integrated circuit, semiconductor device having stop segment in connection region between logic region and memory cell region (2025-12-16),
2. 12484229 - Memory device and method of forming the same (2025-11-25),
3. 12471346 - Memory array isolation structures (2025-11-11),
4. 12464755 - Integrated circuit, transistor and method of fabricating the same (2025-11-04),
5. 12419054 - Three-dimensional memory array with local line selector (2025-09-16),
6. 12414295 - Semiconductor memory structure and method for forming the same (2025-09-09),
7. 12382639 - Three-dimensional memory device and method (2025-08-05),
8. 12376310 - Memory cell having source or drain electrode with kink portion, memory array and manufacturing method thereof (2025-07-29),
9. 12363911 - Semiconductor structure and method for forming thereof (2025-07-15),
10. 12363907 - Memory device comprising conductive pillars (2025-07-15),
11. 12356628 - Memory device and method for making same (2025-07-08),
12. 12349362 - High selectivity isolation structure for improving effectiveness of 3D memory fabrication (2025-07-01),
13. 12342539 - Protective liner layers in 3D memory structure (2025-06-24),
14. 12336183 - Three-dimensional ferroelectric random access memory devices and methods of forming (2025-06-17),
15. 12317541 - Semiconductor device and manufacturing method thereof (2025-05-27),

Title: The Innovative Journey of Yu-Wei Jiang

Introduction: Yu-Wei Jiang is a pioneering inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yu-Wei Jiang holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Yu-Wei Jiang has worked with leading tech companies and research institutions, consistently pushing the boundaries of what is possible in the realm of innovation. His work has been instrumental in shaping the future of various industries.

Collaborations: Throughout his career, Yu-Wei Jiang has collaborated with top researchers, engineers, and inventors from around the world, fostering a culture of creativity and excellence. His collaborative efforts have led to the development of cutting-edge technologies that have revolutionized the way we live and work.

Conclusion: Yu-Wei Jiang's passion for innovation, coupled with his technical expertise and collaborative spirit, has established him as a prominent figure in the world of invention. His relentless pursuit of excellence continues to inspire the next generation of inventors and shape the landscape of technological advancement.

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