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Hsinchu, Taiwan

Macronix International Co., Ltd.

USPTO Granted Patents = 3,603

EPO Patents = 57

Trademarks = 14

Forward Citations = 31,305

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1,468 inventors (with patents filed for the assignee):

Chun-Hsiung Hung (304 out of 306 patents)

Hsiang-Lan Lung (264 out of 275 patents)

Hang-Ting Lue (245 out of 249 patents)

4. Erh-Kun Lai (225 out of 225 patents)

5. Shih-Hung Chen (137 out of 138 patents)

6. Kuen-Long Chang (127 out of 129 patents)

7. Ming-Hsiu Lee (123 out of 127 patents)

8. Tao-Cheng Lu (113 out of 114 patents)

9. Chao-I Wu (102 out of 145 patents)

10. Chung-Kuang Chen (94 out of 94 patents)

11. Yen-Hao Shih (94 out of 95 patents)

12. Ken-Hui Chen (88 out of 89 patents)

13. Han-Sung Chen (85 out of 86 patents)

14. Feng-Min Lee (84 out of 84 patents)

15. Teng-Hao Yeh (84 out of 87 patents)

Core Competencies:

3D Memory Device

In-Memory Computing

Memory Structure

Memory Control Circuit

Data Serializer

Thermal Anneal Circuits

Non-Volatile Memory

Semiconductor Structure

Calibration Apparatus

Duty Cycle Correction

Temperature Sensor

High-Level Architecture

3,603 patents: Sort by Forward Citations

1. 12512133 - System for sharing status among multiple devices (2025-12-30),

2. 12506065 - Semiconductor structure and method for manufacturing the same (2025-12-23),

3. 12500143 - Bonding structure, semiconductor chip and fabricating method thereof (2025-12-16),

4. 12499965 - Memory device and read method adjusting multiple bit line voltages for error mitigation reading (2025-12-16),

5. 12494264 - Memory device and error correction method thereof (2025-12-09),

6. 12494258 - Three-dimensional memory array, memory searching engine circuit and encoding method of the same (2025-12-09),

7. 12494234 - Managing data transfer in semiconductor devices (2025-12-09),

8. 12493698 - Scan chain circuit and operation method thereof (2025-12-09),

9. 12484227 - Memory device with source line over a bonding pad (2025-11-25),

10. 12484211 - Memory structure with three transistors (2025-11-25),

11. 12482505 - Page buffer circuit and operating method thereof adapted for page read device (2025-11-25),

12. 12470210 - Duty cycle correction method and duty cycle correction apparatus (2025-11-11),

13. 12469799 - 3D memory device and method of forming seal structure (2025-11-11),

14. 12469533 - Calibration apparatus and calibration method of memory device with strong-arm comparator (2025-11-11),

15. 12464725 - 3D circuit structure with stairstep contact configuration (2025-11-04),

Macronix International Co., Ltd. is a global leader in the development and manufacture of non-volatile memory (NVM) solutions. With over 30 years of experience, Macronix provides high-performance, low-power flash memory and memory solutions to various industries including consumer electronics, automotive, industrial, and more. Their innovative and reliable products are widely used in applications such as smartphones, tablets, smart home devices, automotive infotainment systems, and IoT devices. Macronix is committed to delivering superior quality and cutting-edge solutions to meet the ever-evolving needs of their customers worldwide.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

3,603 Patents

#2 in Hsinchu

#7 in Taiwan

#246 in the World

Hsinchu, Taiwan

Macronix International Co., Ltd.

Forward Citations = 31,305

1,468 inventors:

Chun-Hsiung Hung (304 out of 306 patents)

Hsiang-Lan Lung (264 out of 275 patents)

Hang-Ting Lue (245 out of 249 patents)

4. Erh-Kun Lai (225 out of 225 patents)

5. Shih-Hung Chen (137 out of 138 patents)

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