The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Oct. 19, 2022
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Wei-Chen Chen, Taoyuan, TW;

Hang-Ting Lue, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); G11C 11/34 (2006.01); G11C 11/39 (2006.01); G11C 11/40 (2006.01); H10B 80/00 (2023.01); H10B 99/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/20 (2023.02); G11C 11/34 (2013.01); G11C 11/39 (2013.01); G11C 11/40 (2013.01); H10B 80/00 (2023.02); H10B 99/20 (2023.02);
Abstract

A memory structure includes a substrate, a first gate structure, a second gate structure, a third gate structure, and channel bodies separated from each other and passing through the first gate structure, the second gate structure and the third gate structure along a first direction. The first gate structure, the second gate structure and the third gate structure are disposed on the substrate, and are separated from each other along the first direction and extend respectively along a second direction and a third direction. The first gate includes first, second and third island structures respectively extending along the third direction and separated from each other along the second direction. The third gate structure includes fourth, fifth and sixth island structures respectively extending along the third direction and separated from each other along the second direction.


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