The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Aug. 09, 2022
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Chih-Chieh Cheng, Zhubei, TW;
Wen-Jer Tsai, Hualien, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76251 (2013.01); H01L 21/76898 (2013.01); H01L 24/08 (2013.01); H01L 2224/08145 (2013.01);
Abstract
A semiconductor structure is provided. The semiconductor structure includes a first substrate, a device layer, a first dielectric layer, a second dielectric layer, a second substrate, and a circuit layer. The device layer is disposed on the first substrate. The first dielectric layer is disposed on the device layer. The second dielectric layer is disposed on the first dielectric layer. The second substrate is disposed on the second dielectric layer. The circuit layer is disposed on the second substrate.