Feng-Min Lee

This inventor holds 92 USPTO granted patents and 27 published patent applications and 1 EPO patent, primarily in In-Memory Computing (CPC class H01L45-1233). Top assignees: Macronix International Co., Ltd., Macronix International. Active years: 2014-2026.

USPTO Granted Patents = 92 (Patent Applications = 27)

% Patents Active = 100.0

EPO Patents = 1 (Patent Applications = 3)

Average Co-Inventor Count = 2.8

ph-index = 10

Forward Citations = 293(Granted Patents)

Forward Citations (Not Self Cited) = 234(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Changhua County, TW (2015 - 2016)
Changhua, TW (2016)
Hsinchu, TW (2014 - 2024)

Company Filing History:

86 out of 3,609

Macronix International Co., Ltd.

patents

6 out of 85

Macronix International

patents

Years Active: 2014-2026

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Areas of Expertise:

In-Memory Computing

Memory Device

Content-Addressable Memory

Memory Structure

Manufacturing Method

Operating Method

Memory Array

Hybrid IMS CAM

Ternary Content Addressable Memory

Integrated Circuit

Memory Cell

Non-Volatile Memory

92 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12665025 - Hybrid type content addressable memory for implementing in-memory-search and operation method thereof (2026-06-23),

2. 12658257 - Memory apparatus and method for data searching and comparing thereof (2026-06-16),

3. 12658256 - Memory device for in-memory computing (2026-06-16),

4. 12592275 - Memory structure and control method for reducing layout area of memory device (2026-03-31),

5. 12586643 - Memory device and operating method thereof (2026-03-24),

6. 12531112 - Memory device and operating method thereof (2026-01-20),

7. 12527005 - Memory device and method for manufacturing the same (2026-01-13),

8. 12505880 - Memory device and method for forming the same (2025-12-23),

9. 12462869 - Memory structure, manufacturing method thereof, operating method thereof, and memory array (2025-11-04),

10. 12456513 - Reservoir device and reservoir array (2025-10-28),

11. 12406742 - Memory device for performing in-memory computation and operating method thereof (2025-09-02),

12. 12406720 - Memory structure, manufacturing method thereof, and operating method thereof (2025-09-02),

13. 12394485 - Integrated circuit structure and method for operating the same (2025-08-19),

14. 12367930 - Memory device and in-memory search method thereof (2025-07-22),

15. 12362014 - In-memory computing (IMC) memory device and in-memory computing method (2025-07-15),

Title: The Innovative Journey of Inventor Feng-Min Lee

Introduction: Feng-Min Lee, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Feng-Min Lee holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse range of expertise and creativity.

Career Highlights: Throughout his illustrious career, Feng-Min Lee has worked with leading tech companies and research institutions, spearheading projects that have pushed the boundaries of innovation. His keen eye for detail and passion for problem-solving have led to the development of cutting-edge solutions that have revolutionized various industries.

Collaborations: Feng-Min Lee has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have resulted in the creation of groundbreaking technologies that have had a lasting impact on society.

Conclusion: In conclusion, Feng-Min Lee's relentless pursuit of innovation and his unwavering dedication to pushing the boundaries of technology have solidified his reputation as a visionary inventor. His contributions to the field continue to inspire future generations of inventors and pave the way for a more technologically advanced world.