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For the Inventor, By the Inventor

Hsinchu, Taiwan

Feng-Min Lee

USPTO Granted Patents = 84 

 

Average Co-Inventor Count = 2.8

ph-index = 10

Forward Citations = 267(Granted Patents)

Forward Citations (Not Self Cited) = 234(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Changhua County, TW (2015 - 2016)
  • Changhua, TW (2016)
  • Hsinchu, TW (2014 - 2024)

Company Filing History:

goldMedal84 out of 3,603 
 
Macronix International Co., Ltd.
 patents

Years Active: 2014-2025

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Areas of Expertise:
Memory Structure
In-Memory Computing
Content-Addressable Memory
Ternary Content Addressable Memory
Flash Memory
Neuromorphic Computing
Memory Device
Memory Array
Integrated Circuit Structure
Multiplication Operation
Reservoir Device
Hybrid Memory
84 patents (USPTO):Explore Patents
1. 12462869 - Memory structure, manufacturing method thereof, operating method thereof, and memory array (2025-11-04),
2. 12456513 - Reservoir device and reservoir array (2025-10-28),
3. 12406742 - Memory device for performing in-memory computation and operating method thereof (2025-09-02),
4. 12406720 - Memory structure, manufacturing method thereof, and operating method thereof (2025-09-02),
5. 12394485 - Integrated circuit structure and method for operating the same (2025-08-19),
6. 12367930 - Memory device and in-memory search method thereof (2025-07-22),
7. 12362014 - In-memory computing (IMC) memory device and in-memory computing method (2025-07-15),
8. 12362003 - In-memory computation device and in-memory computation method to perform multiplication operation in memory cell array according to bit orders (2025-07-15),
9. 12347481 - Universal memory for in-memory computing and operation method thereof (2025-07-01),
10. 12345747 - In memory computing (IMC) memory device and method (2025-07-01),
11. 12342541 - Memory device and method for forming the same (2025-06-24),
12. 12321607 - Memory device and method for operating the same (2025-06-03),
13. 12277968 - In-memory computation device (2025-04-14),
14. 12211550 - Ternary content addressable memory and decision generation method for the same (2025-01-28),
15. 12198757 - Memory device and method for operating the same (2025-01-14),

Title: The Innovative Journey of Inventor Feng-Min Lee

Introduction: Feng-Min Lee, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Feng-Min Lee holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse range of expertise and creativity.

Career Highlights: Throughout his illustrious career, Feng-Min Lee has worked with leading tech companies and research institutions, spearheading projects that have pushed the boundaries of innovation. His keen eye for detail and passion for problem-solving have led to the development of cutting-edge solutions that have revolutionized various industries.

Collaborations: Feng-Min Lee has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have resulted in the creation of groundbreaking technologies that have had a lasting impact on society.

Conclusion: In conclusion, Feng-Min Lee's relentless pursuit of innovation and his unwavering dedication to pushing the boundaries of technology have solidified his reputation as a visionary inventor. His contributions to the field continue to inspire future generations of inventors and pave the way for a more technologically advanced world.

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