Kaohsiung, Taiwan

Wen-Ting Chu

USPTO Granted Patents = 241 

Average Co-Inventor Count = 4.3

ph-index = 18

Forward Citations = 1,246(Granted Patents)


Inventors with similar research interests:


Location History:

  • Kaoshung County, TW (1999)
  • Kaoushiung County, TW (2000)
  • Kaoushing County, TW (2000)
  • Allen, TW (2001)
  • Kaoushiung Country, TW (2002)
  • Kaoshiung, TW (2000 - 2003)
  • Kaoshing County, TW (2003)
  • Kaoshiung County, TW (2001 - 2004)
  • Kaohsing County, TW (2005)
  • Kaihsiung County, TW (2008)
  • Alian Township, Kaohsiung County, TW (2011)
  • Kaohsiung County, TW (2001 - 2016)
  • Kaohisung, TW (2015 - 2017)
  • Hsin-Chu, TW (2002 - 2023)
  • Kaohsiung, TW (2001 - 2024)
  • Hsinchu, TW (2024)

Company Filing History:


Years Active: 1999-2025

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241 patents (USPTO):

Title: Inventor Spotlight: Wen-Ting Chu - Pioneering Innovations in Memory Technology

Introduction:

In the fast-paced world of semiconductor technology, innovation plays a crucial role in shaping the future of electronics. One individual who has consistently pushed the boundaries of memory cell designs and made significant contributions to the field is Wen-Ting Chu from Kaohsiung, Taiwan. With an impressive portfolio of 212 patents to his name, Chu has earned recognition for his exceptional work at Taiwan Semiconductor Manufacturing Company Ltd.

Latest Patents:

Chu's recent patents showcase his expertise in memory cell design and optimization. One notable invention, titled "Memory Cell Having a Top Electrode Interconnect Arranged Laterally from a Recess," focuses on an integrated chip design. This invention features a unique data storage structure with a top electrode that has a recess within its upper surface. The incorporation of a masking layer and an interconnect on the top electrode allows for efficient data storage and retrieval.

Another remarkable patent titled "FeRAM MFM Structure with Selective Electrode Etch" demonstrates Chu's method of forming an integrated chip. By selectively removing portions of the bottom and top electrode layers, Chu creates a protruding surface for the ferroelectric layer. This innovative approach enhances the performance and reliability of ferroelectric random-access memory (FeRAM) technology.

Career Highlights:

Wen-Ting Chu has had a distinguished career at Taiwan Semiconductor Manufacturing Company Ltd., a renowned global semiconductor company that fosters cutting-edge research and development. With an unwavering dedication to advancing memory technology, Chu's contributions have been instrumental in the company's success and the industry as a whole.

Collaborations:

Innovation thrives on collaboration, and Chu is no stranger to working alongside talented individuals to achieve breakthroughs. Among his notable coworkers are Kuo-Chi Tu and Yu-Wen Liao. Together, they have undoubtedly contributed to the collective knowledge and expertise of memory technology at Taiwan Semiconductor Manufacturing Company Ltd.

Conclusion:

Wen-Ting Chu's remarkable journey as an inventor has paved the way for advancements in memory cell design, enabling more efficient and reliable semiconductor technologies. With an extensive patent portfolio and collaborations with other bright minds in the field, Chu continues to make valuable contributions to the ever-evolving semiconductor industry. His dedication and expertise serve as an inspiration for aspiring inventors and engineers, demonstrating the profound impact that innovation can have on the technological landscape.

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